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27LV256
256K (32K x 8) Low-Voltage CMOS EPROM
FEATURES
* Wide voltage range 3.0V to 5.5V * High speed performance - 200 ns access time available at 3.0V * CMOS Technology for low power consumption - 8 mA Active current at 3.0V - 20 mA Active current at 5.5V - 100 A Standby current * Factory programming available * Auto-insertion-compatible plastic packages * Auto ID aids automated programming * Separate chip enable and output enable controls * High speed "Express" programming algorithm * Organized 32K x 8: JEDEC standard pinouts - 28-pin Dual-in-line package - 32-pin PLCC package - 28-pin SOIC package - 28-pin VSOP package - Tape and reel * Data Retention > 200 years * Available for the following temperature ranges: - Commercial: 0C to +70C - Industrial: -40C to +85C
PACKAGE TYPES
PDIP
VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 VSS
*1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3
27LV256
4
3
2
1
32
31
A6 A5 A4 A3 A2 A1 A0 NC O0
30
A7 A12 VPP NU Vcc A14 A13
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 29 28 27 26 25 24 23 22 21
PLCC
A8 A9 A11 NC OE A10 CE O7 O6
SOIC
VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 VSS
O1 O2 VSS NU O3 O4 O5
1 2 3 4 5 6 7 8 9 10 11 12 13 14
27LV256
28 27 26 25 24 23 22 21 20 19 18 17 16 15
DESCRIPTION
The Microchip Technology Inc. 27LV256 is a low voltage (3.0 volt) CMOS EPROM designed for battery powered applications. The device is organized as a 32K x 8 (32K-Byte) non-volatile memory product. The 27LV256 consumes only 8 mA maximum of active current during a 3.0 volt read operation therefore improving battery performance. This device is designed for very low voltage applications where conventional 5.0 volt only EPROMS can not be used. Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 200 ns at 3.0V. This device allows systems designers the ability to use low voltage non-volatile memory with today's' low voltage microprocessors and peripherals in battery powered applications. A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, VSOP or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.
VCC A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3
27LV256
VSOP
OE A11 A9 A8 A13 A14 VCC VPP A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE O7 O6 O5 O4 O3 VSS O2 O1 O0 A0 A1 A2
27LV256
(c) 1996 Microchip Technology Inc.
DS11020F-page 1
This document was created with FrameMaker 4 0 4
27LV256
1.0
1.1
ELECTRICAL CHARACTERISTICS
Maximum Ratings*
TABLE 1-1:
Name A0-A14 CE OE VPP O0 - O7 VCC VSS NC NU
PIN FUNCTION TABLE
Function Address Inputs Chip Enable Output Enable Programming Voltage Data Output +5V or +3V Power Supply Ground No Connection; No Internal Connection Not Used; No External Connection Is Allowed
VCC and input voltages w.r.t. VSS ........ -0.6V to +7.25V VPP voltage w.r.t. VSS during programming ......................................... -0.6V to +14V Voltage on A9 w.r.t. VSS ...................... -0.6V to +13.5V Output voltage w.r.t. VSS ............... -0.6V to VCC +1.0V Storage temperature .......................... -65C to +150C Ambient temp. with power applied ..... -65C to +125C
*Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
TABLE 1-2:
READ OPERATION DC CHARACTERISTICS
VCC = +5V 10% or 3.0V where indicated Commercial: Tamb = 0C to +70C Industrial: Tamb = -40C to +85C
Parameter Input Voltages Input Leakage Output Voltages Output Leakage Input Capacitance Output Capacitance Power Supply Current, Active
Part* all all all all all all C I
Status Logic "1" Logic "0" Logic "1" Logic "0" -- -- -- TTL input TTL input
Symbol VIH VIL ILI VOH VOL ILO CIN COUT ICC1 ICC2
Min. 2.0 -0.5 -10 2.4
Max. VCC+1 0.8 10 0.45
Units V V A V V A pF pF mA mA mA mA
Conditions
VIN = 0 to VCC IOH = -400 A IOL = 2.1 mA VOUT = 0V to VCC VIN = 0V; Tamb = 25C; f = 1 MHz VOUT = 0V; Tamb = 25C; f = 1 MHz VCC = 5.5V; VPP = VCC f = 1 MHz; OE = CE = VIL; IOUT = 0 mA; VIL = -0.1 to 0.8V; VIH = 2.0 to VCC; Note 1
-10 -- -- -- --
10 6 12 20 @ 5.0V 8 @ 3.0V 25 @ 5.0V 10 @ 3.0V
Power Supply Current, Standby
C I all
TTL input TTL input CMOS input
ICC(S)
--
1 @ 3.0V 2 @ 3.0V 100 @ 3.0V
mA mA A
CE=VCC 0.2V
* Parts: C=Commercial Temperature Range I =Industrial Temperature Ranges
Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.
DS11020F-page 2
(c) 1996 Microchip Technology Inc.
27LV256
TABLE 1-3: READ OPERATION AC CHARACTERISTICS
AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature: 27HC256-20 Parameter Address to Output Delay CE to Output Delay OE to Output Delay CE or OE to O/P High Impedance Output Hold from Address CE or OE, whichever goes first Sym Min tACC tCE tOE tOFF tOH -- -- -- 0 0 Max 200 200 100 50 -- Min -- -- -- 0 0 Max 250 250 125 50 -- Min -- -- -- 0 0 Max 300 300 125 50 -- ns ns ns ns ns CE = OE = VIL OE = VIL CE = VIL VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V 1 TTL Load + 100 pF 10 ns Commercial: Tamb = 0C to +70C Industrial: Tamb = -40C to +85C 27HC256-30 Units Conditions
27HC256-25
FIGURE 1-1:
VIH Address VIL VIH CE VIL
READ WAVEFORMS
Address valid
tCE(2)
VIH OE VIL VOH VOL tACC tOE(2) High Z tOFF(1,3) tOH Valid Output High Z
Outputs O0 - O7
Notes: (1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed up to t CE - t OE after the falling edge of CE without impact on tCE (3) This parameter is sampled and is not 100% tested.
(c) 1996 Microchip Technology Inc.
DS11020F-page 3
27LV256
TABLE 1-4: PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25C 5C VCC = 6.5V 0.25V, VPP = 13.0V 0.25V Parameter Input Voltages Input Leakage Output Voltages VCC Current, program & verify VPP Current, program A9 Product Identification Status Logic"1" Logic"0" -- Logic"1" Logic"0" -- -- -- Symbol VIH VIL ILI VOH VOL ICC2 IPP2 VH Min 2.0 -0.1 -10 2.4 0.45 -- -- 11.5 20 25 12.5 Max. VCC+1 0.8 10 Units V V A V V mA mA V VIN = 0V to VCC IOH = -400 A IOL = 2.1 mA Note 1 Note 1 Conditions
Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
TABLE 1-5:
PROGRAMMING AC CHARACTERISTICS
AC Testing Waveform: VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V Output Load: 1 TLL Load + 100pF Ambient Temperature: Tamb=25C5C VCC= 6.5V 0.25V, VPP =13.0V 0.25V Symbol tAS tDS tDH tAH tDF tVCS tPW tCES tOES tVPS tOE Min. 2 2 2 0 0 2 95 2 2 2 -- Max. -- -- -- -- 130 -- 105 -- -- -- 100 Units s s s s ns s s s s s ns 100 s typical Remarks
for Program, Program Verify and Program Inhibit Modes
Parameter Address Set-Up Time Data Set-Up Time Data Hold Time Address Hold Time Float Delay (2) VCC Set-Up Time Program Pulse Width (1) CE Set-Up Time OE Set-Up Time VPP Set-Up Time Data Valid from OE
Note 1: For express algorithm, initial programming width tolerance is 100 s 5%. 2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no longer driven (see timing diagram).
DS11020F-page 4
(c) 1996 Microchip Technology Inc.
27LV256
FIGURE 1-2: PROGRAMMING WAVEFORMS
Program VIH Address VIL tAS VIH Data VIL tDS 13.0V(2) VPP 5.0V 6.5V(2) VCC 5.0V VIH CE VIL VIH OE VIL Notes: tPW tOPW tOES tOE (1) tVCS tVPS Data Stable tDH High Z Data Out Valid tDF (1) tAH Address Stable Verify
(1) tDF and tOE are characteristics of the device but must be accommodated by the programmer (2) VCC = 6.5V 0.25V, V PP = VH = 13.0V 0.25V for express algorithm
TABLE 1-6:
MODES
CE VIL VIL VIH VIH VIH VIL VIL OE VIL VIH VIL VIH X VIH VIL VPP VCC VH VH VH VCC VCC VCC A9 X X X X X X VH O0 - O7 DOUT DIN DOUT High Z High Z High Z Identity Code
Operation Mode Read Program Program Verify Program Inhibit Standby Output Disable Identity
X = Don't Care
1.2
Read Mode
(See Timing Diagrams and AC Characteristics) Read Mode is accessed when: a) b) the CE pin is low to power up (enable) the chip the OE pin is low to gate the data to the output pins
For Read operations, if the addresses are stable, the address access time (tACC) is equal to the delay from CE to output (tCE). Data is transferred to the output after a delay from the falling edge of OE (tOE).
(c) 1996 Microchip Technology Inc.
DS11020F-page 5
27LV256
1.3 Standby Mode 1.6 Verify
The standby mode is defined when the CE pin is high (VIH) and a program mode is not defined. Output Disable After the array has been programmed it must be verified to ensure that all the bits have been correctly programmed. This mode is entered when all of the following conditions are met: a) b) c) d) VCC is at the proper level VPP is at the proper VH level the CE pin is high the OE line is low
1.4
Output Enable
This feature eliminates bus contention in multiple bus microprocessor systems and the outputs go to a high impedance when the following condition is true: * The OE pin is high and program mode is not defined.
1.7
Inhibit
1.5
Programming Mode
The Express algorithm has been developed to improve on the programming throughput times in a production environment. Up to 10 100-microsecond pulses are applied until the byte is verified. No over-programming is required. A flowchart of the express algorithm is shown in Figure 1. Programming takes place when: a) b) c) d) VCC is brought to the proper voltage VPP is brought to the proper VH level the OE pin is high the CE pin is low
When Programming multiple devices in parallel with different data, only CE needs to be under separate control to each device. By pulsing the CE line low on a particular device, that device will be programmed, and all other devices with CE held high will not be programmed with the data although address and data are available on their input pins.
1.8
Identity Mode
Since the erased state is "1" in the array, programming of "0" is required. The address to be programmed is set via pins A0-A14 and the data to be programmed is presented to pins O0-O7. When data and address are stable, a low-going pulse on the CE line programs that location.
In this mode specific data is outputted which identifies the manufacturer as Microchip Technology Inc. and device type. This mode is entered when Pin A9 is taken to VH (11.5V to 12.5V). The CE and OE lines must be at VIL. A0 is used to access any of the two non-erasable bytes whose data appears on O0 through O7. Pin Identity Input A0 Output 0OOOOOOO H 76543210 e x 0 0 1 0 1 0 0 1 29 1 0 0 0 1 1 0 0 8C
Manufacturer Device Type*
VIL VIH
* Code subject to change.
DS11020F-page 6
(c) 1996 Microchip Technology Inc.
27LV256
FIGURE 1-3: PROGRAMMING EXPRESS ALGORITHM
Conditions: Tamb = 25+/-5C VCC = 6.5+/-0.25V VPP = 13.0+/-0.25V
Start
ADDR = First Location VCC = 6.5V VPP = 13.0V X=0 Program one 100 s pulse Increment X
Verify Byte
Pass
Fail No Yes Device Failed
X = 10?
Last Address?
Yes
No Increment Address
VCC = VPP = 4.5V, 5.5V
Device Passed
Yes
All bytes = original data?
No
Device Failed
(c) 1996 Microchip Technology Inc.
DS11020F-page 7
27LV256
NOTES:
DS11020F-page 8
(c) 1996 Microchip Technology Inc.
27LV256
NOTES:
(c) 1996 Microchip Technology Inc.
DS11020F-page 9
27LV256
NOTES:
DS11020F-page 10
(c) 1996 Microchip Technology Inc.
27LV256
27LV256 Product Identification System
To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices.
27LV256
-
25
I
/P Package: L P SO VS = = = = Plastic Leaded Chip Carrier Plastic DIP (600 Mil) Plastic SOIC (300 Mil) Very Small Outline Package (VSOP) 8X13.4mm
Temperature Range: Access Time: Device:
Blank = 0C to +70C I = -40C to +85C 20 = 200 ns 25 = 250 ns 30 = 300 ns (SOIC only) 27LV256 256K (32K x 8) Low-Voltage CMOS EPROM
(c) 1996 Microchip Technology Inc.
DS11020F-page 11
WORLDWIDE SALES & SERVICE
AMERICAS
Corporate Office Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 602 786-7200 Fax: 602 786-7277 Technical Support: 602 786-7627 Web: http://www.microchip.com Atlanta Microchip Technology Inc. 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770 640-0034 Fax: 770 640-0307 Boston Microchip Technology Inc. 5 Mount Royal Avenue Marlborough, MA 01752 Tel: 508 480-9990 Fax: 508 480-8575 Chicago Microchip Technology Inc. 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 708 285-0071 Fax: 708 285-0075 Dallas Microchip Technology Inc. 14651 Dallas Parkway, Suite 816 Dallas, TX 75240-8809 Tel: 972 991-7177 Fax: 972 991-8588 Dayton Microchip Technology Inc. Suite 150 Two Prestige Place Miamisburg, OH 45342 Tel: 513 291-1654 Fax: 513 291-9175 Los Angeles Microchip Technology Inc. 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 714 263-1888 Fax: 714 263-1338 New York Microchip Technmgy Inc. 150 Motor Parkway, Suite 416 Hauppauge, NY 11788 Tel: 516 273-5305 Fax: 516 273-5335 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408 436-7950 Fax: 408 436-7955 Toronto Microchip Technology Inc. 5925 Airport Road, Suite 200 Mississauga, Ontario L4V 1W1, Canada Tel: 905 405-6279 Fax: 905 405-6253
ASIA/PACIFIC
China Microchip Technology Unit 406 of Shanghai Golden Bridge Bldg. 2077 Yan'an Road West, Hongiao District Shanghai, Peoples Republic of China Tel: 86 21 6275 5700 Fax: 011 86 21 6275 5060 Hong Kong Microchip Technology RM 3801B, Tower Two Metroplaza 223 Hing Fong Road Kwai Fong, N.T. Hong Kong Tel: 852 2 401 1200 Fax: 852 2 401 3431 India Microchip Technology No. 6, Legacy, Convent Road Bangalore 560 025 India Tel: 91 80 526 3148 Fax: 91 80 559 9840 Korea Microchip Technology 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku, Seoul, Korea Tel: 82 2 554 7200 Fax: 82 2 558 5934 Singapore Microchip Technology 200 Middle Road #10-03 Prime Centre Singapore 188980 Tel: 65 334 8870 Fax: 65 334 8850 Taiwan, R.O.C Microchip Technology 10F-1C 207 Tung Hua North Road Taipei, Taiwan, ROC Tel: 886 2 717 7175 Fax: 886 2 545 0139
EUROPE
United Kingdom Arizona Microchip Technology Ltd. Unit 6, The Courtyard Meadow Bank, Furlong Road Bourne End, Buckinghamshire SL8 5AJ Tel: 44 1628 850303 Fax: 44 1628 850178 France Arizona Microchip Technology SARL Zone Industrielle de la Bonde 2 Rue du Buisson aux Fraises 91300 Massy - France Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79 Germany Arizona Microchip Technology GmbH Gustav-Heinemann-Ring 125 D-81739 Muenchen, Germany Tel: 49 89 627 144 0 Fax: 49 89 627 144 44 Italy Arizona Microchip Technology SRL Centro Direzionale Colleone Pas Taurus 1 Viale Colleoni 1 20041 Agrate Brianza Milan Italy Tel: 39 39 6899939 Fax: 39 39 689 9883
JAPAN
Microchip Technology Intl. Inc. Benex S-1 6F 3-18-20, Shin Yokohama Kohoku-Ku, Yokohama Kanagawa 222 Japan Tel: 81 45 471 6166 Fax: 81 45 471 6122
9/3/96
All rights reserved. (c) 1996, Microchip Technology Incorporated, USA. 9/96
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
DS11020F-page 12
(c) 1996 Microchip Technology Inc.

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